GaN-Based Light Emitting Diodes With Tunnel Junctions : Semiconductors

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-08-15

著者

• Blomqvist Mats

  Agilent Technologies Laboratories

• STOCKMAN Steve

  Lumileds Lighting

• TAKEUCHI Tetsuya

  Agilent Technologies Laboratories

• HASNAIN Ghulam

  Agilent Technologies Laboratories

• CORZiNE Scott

  Agilent Technologies Laboratories

• HUESCHEN Mark

  Agilent Technologies Laboratories

• SCHNEIDER Richard

  Agilent Technologies Laboratories

• KOCOT Chris

  Agilent Technologies Laboratories

• CHANG Ying-lan

  Agilent Technologies Laboratories

• LEFFORGE Dale

  Agilent Technologies Laboratories

• KRAMES Mike

  Lumileds Lighting

• COOK Lou

  Lumileds Lighting

• Stockman S

  Lumileds Lighting Ca Usa

関連論文

• Current Dependence of In-Plane Electroluminescence Distribution of In_x Ga_ N/GaN Multiple Quantum Well Light Emitting Diodes
• GaN-Based Light Emitting Diodes With Tunnel Junctions : Semiconductors
• Al Gettering for InGaAsN in Metalorganic Chemical Vapor Deposition
• Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3μm InGaAsN Vertical Cavity Surface Emitting Lasers
• High Performance AlGaInN Ultraviolet Light-Emitting Diode at the 340nm Wavelength
• Al Gettering for InGaAsN in Metalorganic Chemical Vapor Deposition

スポンサーリンク