Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3μm InGaAsN Vertical Cavity Surface Emitting Lasers
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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TAKEUCHI Tetsuya
Agilent Technologies Laboratories
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CHANG Ying-lan
Agilent Technologies Laboratories
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Mantese Lucy-marie
Agilent Technologies
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Luan Hsin-chiao
Agilent Technologies
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Belov Svetlana
Agilent Technologies Laboratories
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Tandon Ashish
Agilent Technologies Laboratories
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Song Yoon
Agilent Technologies
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Mars Dan
Agilent Technologies Laboratories
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Takeuchi Tetsuya
Device Platforms Research Labs. Nec.
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LEARY Michael
Agilent Technologies Laboratories
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ROH S.
Agilent Technologies
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TWIST Rosemary
Agilent Technologies Laboratories
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BOUR David
Agilent Technologies Laboratories
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TAN Michael
Agilent Technologies Laboratories
関連論文
- GaN-Based Light Emitting Diodes With Tunnel Junctions : Semiconductors
- Al Gettering for InGaAsN in Metalorganic Chemical Vapor Deposition
- Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3μm InGaAsN Vertical Cavity Surface Emitting Lasers
- Al Gettering for InGaAsN in Metalorganic Chemical Vapor Deposition