High Performance AlGaInN Ultraviolet Light-Emitting Diode at the 340nm Wavelength
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-11-01
著者
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KRAMES Mike
Lumileds Lighting
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JEON Seong-Ran
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk
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Zhou Ling
Lumileds Lighting Llc
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Jeon Seong-ran
Department Of Electrical Engineering Yale University
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Krames Mike
Lumileds Lighting Llc
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GHERASIMOVA Maria
Department of Electrical Engineering, Yale University
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REN Zaiyuan
Department of Electrical Engineering, Yale University
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SU Jie
Department of Electrical Engineering, Yale University
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CUI George
Department of Electrical Engineering, Yale University
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HAN Jung
Department of Electrical Engineering, Yale University
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PENG Hongbo
Division of Engineering, Brown University
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SONG Yoon-Kyu
Division of Engineering, Brown University
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NURMIKKO Arto
Division of Engineering, Brown University
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GOETZ Werner
Lumileds Lighting, LLC
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Su Jie
Department Of Electrical Engineering Yale University
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Ren Zaiyuan
Department Of Electrical Engineering Yale University
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Peng Hongbo
Division Of Engineering Brown University
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Goetz Werner
Lumileds Lighting Llc
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Nurmikko A
Brown Univ. In Providence Rhode Island
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Cui George
Department Of Electrical Engineering Yale University
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Song Yoon-kyu
Division Of Engineering Brown University
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Gherasimova Maria
Department Of Electrical Engineering Yale University
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Han Jung
Department Of Electrical Engineering Yale University
関連論文
- GaN-Based Light Emitting Diodes With Tunnel Junctions : Semiconductors
- Reduction of Operation Voltage in GaN-Based Light-Emitting Diode Utilizing a Si δ-Doped n-GaN Contact Layer : Optics and Quantum Electronics
- High Performance AlGaInN Ultraviolet Light-Emitting Diode at the 340nm Wavelength
- Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar $a$-Plane GaN Revealed by X-ray Diffraction