Reduction of Operation Voltage in GaN-Based Light-Emitting Diode Utilizing a Si δ-Doped n-GaN Contact Layer : Optics and Quantum Electronics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-07-01
著者
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Hang Tran
Department Of Horticulture Faculty Of Agronomy Hanoi University Of Agriculture
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Hang Tran
Department Of Semiconductor Science & Technology And Semiconductor Physics Research Center Chonb
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JEON Seong-Ran
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk
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CHO Myong
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk
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YU Min-A
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk
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YAMG Gye
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk
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Yamg Gye
Department Of Semiconductor Science & Technology And Semiconductor Physics Research Center Chonb
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Yu Min-a
Department Of Semiconductor Science & Technology And Semiconductor Physics Research Center Chonb
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Cho Myong
Department Of Semiconductor Science & Technology And Semiconductor Physics Research Center Chonb
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Jeon Seong-ran
Department Of Semiconductor Science & Technology And Semiconductor Physics Research Center Chonb
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Jeon Seong-ran
Department Of Electrical Engineering Yale University
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Hung Tran
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University
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HUNG Tran
Department of Mathematics Quangbinh University
関連論文
- Reduction of Operation Voltage in GaN-Based Light-Emitting Diode Utilizing a Si δ-Doped n-GaN Contact Layer : Optics and Quantum Electronics
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- Production and characterization of alien chromosome additions in shallot (Allium cepa L. Aggregatum group) carrying extra chromosome(s) of Japanese bunching onion (A. fistulosum L.)
- High Performance AlGaInN Ultraviolet Light-Emitting Diode at the 340nm Wavelength
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