Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
InGaN/AlGaN multi-quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy. The In composition of the InGaN well layer was found to increase with the tensile strain of the AlGaN barrier layer. The InGaN/AlGaN strain-compensated structure can be grown at a higher growth temperature than that of the InGaN/GaN MQW, which shows that the same emission wavelength and thus the density of the V-defects can be effectively suppressed.
- 2013-08-25
著者
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Doi Tomohiro
Department Of Biotechnology Graduate School Of Engineering Osaka University
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
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