Enhancement of Electron Mobility in Quasi-One-Dimensional Structure
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概要
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The electron mobility and energy relaxation phenomena in GaAs wires with geometrical width of 300–400 nm were investigated using the magnetotransport and photoluminescence (PL) intensity correlation method. The electron mobility at 4.2 K was analyzed with the Shubnikov de Haas effect. It was found that the narrower the wire width is the higher the electron mobility is. The femtosecond PL measurements were performed at 77 K. The rate of cooling with emission of LO phonons of photoexcited hot electrons was found to be lower in narrower wires. The electric field dependence of the PL spectra showed that the LA phonon scattering rate is also reduced in quasi-one-dimensional electron gas (Q-1DEG) structures.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-06-15
著者
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Niwa Shoko
Department Of Electronics Nagoya University
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Suzuki Takamasa
Department Of Applied Science Faculty Of Engineering Kyushu University
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Suzuki Takamasa
Department of Electronics, Nagoya University, Chikusa-ku, Nagoya 464-01, Japan
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Niwa Shoko
Department of Electronics, Nagoya University, Chikusa-ku, Nagoya 464-01, Japan
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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