Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane

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概要

• 論文の詳細を見る

• A Si-doped GaN layer was grown by MOVPE (metal-organic vapor phase epitaxy) using tetraethylsilane (TeESi) as the dopant. The Hall effect was studied between 11 K and 300 K. The electron concentration was observed to increase with the increase in the TeESi flow rate. The activation energy E_D for ionization of shallow donors was determined to be 27 meV.

• 社団法人応用物理学会の論文
• 1996-04-15

著者

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• SAWAKI Nobuhiko

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• Sawaki N

  Nagoya Univ. Nagoya Jpn

• DETCHPROHM Theeradetch

  Department of Electrical and Electronic Engineering, Meijo University

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• Hiramatsu K

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• KANEDA Naoki

  Department of Electronics, School of Engineering, Nagoya University

• Detchprohm T

  High-tech Research Center Meljo University

• Kaneda Naoki

  Department Of Electronics School Of Engineering Nagoya University

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

• SAWAKI Nobuhiko

  Department of Electronics, Nagoya University

関連論文

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