Electron Mobility and Drag Effect in p-Type Silicon
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概要
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The drift mobility of electrons in p-type silicon containing acceptor concentrations from l.4×10^<13>cm^<-13> to 5.8×10<15>cm^<-3> was measured by the time-of-flight technique. The experiments were carried out at temperatures from 77 K to 300K by applying electric fields between 25 V/cm and 700V/cm. In the ohmic region, a large reduction in mobility wasobserved below 150 K in low-resistivity samples. By applying Mclean and Paige's theory, it was found that this reductionis due to the drag effect by the majority holes. In the warm electron region, the mobility of electrons was found to besmaller than that for an intrinsic material. This is the first observation of the enhancement of the drag effect of the electric field.
- 社団法人応用物理学会の論文
- 1985-06-20
著者
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Sawaki N
Nagoya Univ. Nagoya Jpn
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Morohashi Makoto
Department Of Electronics Faculty Of Engineering Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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