Thermodynamical Analysis and Luminescence Properties of Vapor-Grown ZnSxSe1-x II—Bypass Flow Effect—
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概要
- 論文の詳細を見る
The improved vapor phase epitaxial growth technique is applied to the growth of a ZnSxSe1-x layer on a Gap substrate. It is predicted by a thermodynamical analysis and confirmed experimentally that the ZnS molar fraction $x$ can be controlled over a wide range by varying the amount of hydrogen fed through a bypass tube to dilute the source gas without changing the source and/or the substrate temperature. The photoluminescence spectra of the ZnSxSe1-x/GaP ($0.50{<}x{<}1.0$) sample exhibit only a strong edge emission at room temperature, showing that the epitaxial layers are of high quality.
- 公益社団法人 応用物理学会の論文
- 1989-07-20
著者
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
-
Zhou Jun
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Goto Hideo
Department Of Biochemistry Nagoya City University Medical School
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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Sawaki Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Nagoya 464-01
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