Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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概要

• 論文の詳細を見る

• Optical transverse-mode properties of the GaN-based semiconductor laser-diode is characterized by effective refractive index method. In order to stabilize a transverse-mode in the conventional ridge-waveguide structure, very precise control of ridge-height is found to be necessary. On the contrary, a novel 2-step grown structure with 2-dimensional index guiding has wide feasibility for device parameter, excellent stability of large confinement factor in transverse-mode, and small aspect ratio of beam divergence, under the condition that AlN molar fraction of 0.08 in AlGaN current blocking layer and stripe width of 1.5μm are used.

• 社団法人電子情報通信学会の論文
• 2000-04-25

著者

• Kamiyama S

  Faculty Of Science And Technology Meijo University

• Kamiyama S

  Silicon Systems Research Laboratories Nec Corporation

• Kamiyama Satoshi

  Ulsi Device Development Laboratories Nec Corporation

• Akasaki I

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering Meijyo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Isomura Kimio

  The Authors Are With The Department Of Electrical And Electronic Engineering Meijo University

• Iwaya M

  Faculty Of Science And Technology Meijo University

• SATO Toshiyuki

  The authors are with the Department of Electrical and Electronic Engineering, Meijo University

• IWAYA Motoaki

  The authors are with the Department of Electrical and Electronic Engineering, Meijo University

• UKAI Tsutomu

  The authors are with the Department of Electrical and Electronic Engineering, Meijo University

• KAMIYAMA Satoshi

  The authors are with High-Tech Research Center, Meijo University

• AMANO Hiroshi

  The authors are with the Department of Electrical and Electronic Engineering, Meijo University

• AKASAKI Isamu

  The authors are with the Department of Electrical and Electronic Engineering, Meijo University

• Ukai Tsutomu

  The Authors Are With The Department Of Electrical And Electronic Engineering Meijo University

• Sato Toshiyuki

  The Authors Are With The Department Of Electrical And Electronic Engineering Meijo University

• Kamiyama Satoshi

  Faculty of Science and Technology, Meijo University

• Iwaya Motoaki

  Faculty of Science and Technology, Meijo University

• Akasaki Isamu

  Faculty of Science and Technology, Meijo University

• Kamiyama Satoshi

  Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University

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