Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-12-20

著者

• Goto H

  Mie Univ. Tsu Jpn

• Goto Hideo

  Department Of Electrical Engineering Chubu University

• Hayashi K

  Kyoto Univ. Kyoto Jpn

• SAWAKI Nobuhiko

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering Meijyo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Goto H

  Fujitsu Ltd. Kawasaki Jpn

• Sawaki N

  Nagoya Univ. Nagoya Jpn

• Goto Hideo

  Department Of Biochemistry Nagoya City University Medical School

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• HAYASHI Kouji

  Department of Electronics, School of Engineering, Nagoya University

• Hiramatsu Kazumasa

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hiramatsu K

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu K

  Ntt Corp. Tsukuba‐shi Jpn

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

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