Light Emission and Surface States Annealing on GaAs Metal Semiconductor Field-Effect Transistor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-02-15
著者
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Mizuguchi Kiyoshi
Semiconductor Group Mitsubishi Electric Corporation
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Mizuguchi K
Semiconductor Group Mitsubishi Electric Corporation
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Hayashi K
Kyoto Univ. Kyoto Jpn
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Hayashi Kouichi
Department Of Materials Science And Engineering Kyoto University
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HAYASHI Ken-ichi
Keio University
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Sasaki Hajime
Semiconductor Group Mitsubishi Electric Corporation
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HAYASHI Kazuo
Semiconductor Group, Mitsubishi Electric Corporation
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FUJIOKA Takashi
Semiconductor Group, Mitsubishi Electric Corporation
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YEA Byeongdeok
Faculty of Engineering, Tottori University
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OSAKI Tomoyuki
Faculty of Engineering, Tottori University
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SUGAHARA Kazunori
Faculty of Engineering, Tottori University
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KONISHI Ryosuke
Faculty of Engineering, Tottori University
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ABE Masayuki
Semiconductor Group, Mitsubishi Electric Corporation
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Sasaki Hideyuki
R&d Center Toshiba Corp.
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Hayashi Kunihiko
Superconductivity Research Laboratory International Superconductivity Technology Center
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Abe Masayuki
Semiconductor Group Mitsubishi Electric Corporation
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Sasaki H
Semiconductor Group Mitsubishi Electric Corporation
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Sasaki H
Electrotechnical Laboratory
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Yea Byeongdeok
Korea Maritime University
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Osaki T
Department Of Electrical And Electronic Engineering Tottori University
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Hayashi Katsuro
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Sugahara Kazunori
Department Of Information And Knowledge Engineering Tottori University
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Konishi Ryosuke
Department Of Electrical And Electronic Engineering Tottori University
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