Analysis of Gate Lag in GaAs Metal-Semiconductor Field-Effect Transistor Using Light Illumination
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-12-15
著者
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Ishihara Osamu
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Ando K
Toyota Technological Institute
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Sasaki Hajime
Semiconductor Group Mitsubishi Electric Corporation
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KONISHI Ryosuke
Faculty of Engineering, Tottori University
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ANDO Koshi
Faculty of Engineering, Tottori University
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SASAKI Hajime
Microwave & Optical Device Reliability Engineering Section, Semiconductor Group, Mitsubishi Electric
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MATSUBAYASHI Hiroto
Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Sasaki Hideyuki
R&d Center Toshiba Corp.
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Ishihara Osamu
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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Ishihara Osamu
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corp.
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Sasaki H
Semiconductor Group Mitsubishi Electric Corporation
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Sasaki H
Electrotechnical Laboratory
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Ando K
Department Of Electrical And Electronic Engineering Tottori University
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Konishi R
Tottori Univ. Tottori
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Konishi Ryosuke
Department Of Electrical And Electronic Engineering Tottori University
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Matsubayashi Hiroto
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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