Observation of Sorption of 0_2 and N_z on Ti Thin Film by DAPS, AEAPS, AES and Electrical Resistance Methods

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概要

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• The sorption process of Ti thin films during oxygen and nitrogen exposure has been investigated using a combination of DAPS, AEAPS, AES and electrical resistance measurements. In the case of oxygen exposure, oxygen atoms diffuse into layers up to 3-5 Å beneath the surface at an exposure of 4L. Further exposure of 5-100L enhances the diffusion, probably to a depth of 6-10Å. Furthermore, comparison of DAPS and AEAPS measurements shows that a stable surface oxidation layer is formed in the 6-10 Å layer at an exposure of 100L. In the case of nitrogen exposure, nitrogen atoms adsorb on the surface at 3-4L. After that, nitrogen atoms diffuse into the layer 6-10 Å below the surface at exposure of 7-10L, followed by saturation. The saturation value of the diffusion depth of nitrogen atoms in Ti thin films is found to be much smaller than that of oxygen atoms.

• 社団法人応用物理学会の論文
• 1985-08-20

著者

• Sasakura Hiroshi

  Department Of Electrical Engineering And Electronics Faculty Of Engineering Tottori Univeristy

• Sasakura H

  Department Of Materials Science University Of Osaka Prefecture

• Konishi R

  Tottori Univ. Tottori

• Konishi Ryosuke

  Department Of Electrical And Electronic Engineering Tottori University

• MIYADA Yoshinori

  Department of Electronics, Faculty of Engineering, Tottori University

• Miyada Yoshinori

  Department Of Electronics Faculty Of Engineering Tottori University

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