Analysis of Surface States of Gallium Arsenide Metal Semiconductor Field-Effect Transistors using Drain Current Transients under Light Illumination
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-15
著者
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Sasaki Hajime
Semiconductor Group Mitsubishi Electric Corporation
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YEA Byeongdeok
Faculty of Engineering, Tottori University
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OSAKI Tomoyuki
Faculty of Engineering, Tottori University
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SUGAHARA Kazunori
Faculty of Engineering, Tottori University
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KONISHI Ryosuke
Faculty of Engineering, Tottori University
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SASAKI Hajime
Faculty of Engineering, Tottori University
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HAYASHIGUCHI Youichi
Faculty of Engineering, Tottori University
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Sasaki Hideyuki
R&d Center Toshiba Corp.
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Sasaki H
Semiconductor Group Mitsubishi Electric Corporation
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Sasaki H
Electrotechnical Laboratory
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Yea Byeongdeok
Korea Maritime University
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Osaki T
Department Of Electrical And Electronic Engineering Tottori University
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Sugahara Kazunori
Department Of Information And Knowledge Engineering Tottori University
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Hayashiguchi Youichi
Faculty Of Engineering Tottori University
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Konishi Ryosuke
Department Of Electrical And Electronic Engineering Tottori University
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