Analysis of Surface States of Gallium Arsenide Metal Semiconductor Field-Effect Transistors using Drain Current Transients under Light Illumination

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概要

• 論文の詳細を見る

• Characteristics of charge trapping at surface states of gallium arsenide metal semiconductor field-effect transistors (GaAs MESFETs) are analyzed using drain current transients under light illumination. Accurate trap density is obtained by classifying the transient into two components: one resulting from thermal emission and the other from light illumination. A slight decrease in delay time is observed under infrared light illumination having the photon energy lower than the band gap of GaAs. Pulse light illumination indicates an increase in charge trapping under the illumination during gate-off period.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-12-15

著者

• YEA Byeongdeok

  Faculty of Engineering, Tottori University

• OSAKI Tomoyuki

  Faculty of Engineering, Tottori University

• SUGAHARA Kazunori

  Faculty of Engineering, Tottori University

• KONISHI Ryosuke

  Faculty of Engineering, Tottori University

• SASAKI Hajime

  Faculty of Engineering, Tottori University

• Hayashiguchi Youichi

  Faculty Of Engineering Tottori University

• Yea Byeongdeok

  Faculty of Engineering, Tottori University, 4-101 Koyama, Tottori 680-8552, Japan

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