Decrease in Surface States on GaAs Metal-Semiconductor Field-Effect Transistor by High Temperature Operation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-04-15

著者

• Mizuguchi Kiyoshi

  Semiconductor Group Mitsubishi Electric Corporation

• Mizuguchi K

  Semiconductor Group Mitsubishi Electric Corporation

• Hayashi K

  Kyoto Univ. Kyoto Jpn

• Hayashi Kouichi

  Department Of Materials Science And Engineering Kyoto University

• HAYASHI Ken-ichi

  Keio University

• Ando K

  Toyota Technological Institute

• Sasaki Hajime

  Semiconductor Group Mitsubishi Electric Corporation

• HAYASHI Kazuo

  Semiconductor Group, Mitsubishi Electric Corporation

• FUJIOKA Takashi

  Semiconductor Group, Mitsubishi Electric Corporation

• YEA Byeongdeok

  Faculty of Engineering, Tottori University

• OSAKI Tomoyuki

  Faculty of Engineering, Tottori University

• SUGAHARA Kazunori

  Faculty of Engineering, Tottori University

• KONISHI Ryosuke

  Faculty of Engineering, Tottori University

• KASADA Hirofumi

  Faculty of Engineering, Tottori University

• ANDO Koshi

  Faculty of Engineering, Tottori University

• Sasaki Hideyuki

  R&d Center Toshiba Corp.

• Hayashi Kunihiko

  Superconductivity Research Laboratory International Superconductivity Technology Center

• Sasaki H

  Semiconductor Group Mitsubishi Electric Corporation

• Sasaki H

  Electrotechnical Laboratory

• Ando K

  Department Of Electrical And Electronic Engineering Tottori University

• Yea Byeongdeok

  Korea Maritime University

• Osaki T

  Department Of Electrical And Electronic Engineering Tottori University

• Hayashi Katsuro

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Sugahara Kazunori

  Department Of Information And Knowledge Engineering Tottori University

• Konishi Ryosuke

  Department Of Electrical And Electronic Engineering Tottori University

• Kasada Hirofumi

  Faculty Of Engineering Tottori University

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