Effect of Lens Aberration on Resist Pattern Profiles in Edge-Line Phase-Shift Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-09-15
著者
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Kamon Kazuya
Ulsi Laboratory Mitsubishi Electric Corporation
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Kamon Kazuya
Ulsi Laboratory Mitsubishi Electric Corp.
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Ishihara Osamu
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Ishihara Osamu
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corp.
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Kojima Yoshiki
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corp.
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NAKATANI Mitsunori
Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corp.
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NAKANO Hirofumi
Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corp.
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SATO Kazuhiko
Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corp.
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TAKANO Hirozou
Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corp.
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Takano Hirozou
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corp.
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Nakatani Mitsunori
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corp.
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Nakano Hirofumi
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corp.
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Sato Kazuhiko
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corp.
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- Analysis of Gate Lag in GaAs Metal-Semiconductor Field-Effect Transistor Using Light Illumination
- Effect of Lens Aberration on Resist Pattern Profiles in Edge-Line Phase-Shift Method
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