Alloyed and Non-Alloyed Ohmic Contacts for AlInAs/InGaAs High Electron Mobility Transistors

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概要

• 論文の詳細を見る

• AuGe/Ni/Au alloyed and WSi non-alloyed ohmic contacts are investigated for AlInAs/InGaAs high electron mobility transistors (HEMTs). For the alloyed contact, a contact resistance (R_c) lower than 0.03 Ωmm is obtained at an alloy temperature of 300℃. The value of R_c drastically increases with alloy temperatures above 300℃ and exceeds 0.15 Ωmm at 380℃. Auger analysis and analytical cross-sectional transmission electron microscopy have revealed significant outdiffusion of In in the epitaxial layer into the top Au layer and the formation of polycrystalline GaAs in the epitaxial layer, which cause the increase of R_c with alloy temperature. For the refractory WSi non-alloyed ohmic contact, R_c remains lower than 0.1 Ωmm under annealing temperatures up to 380℃. The extrinsic maximum transconductance (g_m) of 600 mS/mm is obtained for the HEMT device with the WSi ohmic contact.

• 社団法人応用物理学会の論文
• 1994-06-15

著者

• YOSHIDA Naohito

  Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation

• Yamamoto Yoshitsugu

  Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation

• Sonoda Takuji

  Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation

• Takano Hirozo

  Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation

• YAMAMOTO Yoh

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• Yamamoto Yoshitsugu

  Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation

• Sonoda Takuji

  Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation

• Sonoda Takuji

  Optoelectronic & Microwave Devices Lab. Mitsubishi Electric Corporation

• Mitsui Shigeru

  Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation

• Mitsui Shigeru

  Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation

• TAKAMIYA Saburou

  Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation

• TAKANO Hirozou

  Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corp.

• Yoshida N

  Mitsubishi Electric Corp. Itami‐shi Jpn

• Yoshida Naohito

  Optoelectronic And Microwave Devices R&d Laboratory Mitsubishi Electric Corporation

• Takano H

  Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation

• Takamiya S

  Mitsubishi Electric Corp. Hyogo Jpn

• Yoshida Naohito

  Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation

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