GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer Chip Sets (Special Issue on Ultra-High-Speed LSIs)
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概要
- 論文の詳細を見る
GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer chip sets have been successfully developed. The 64-bit 156Mb/s parallel data output or input of these chip sets can be directly connected to CMOS LSIs. These chip sets consist of a 10 Gb/s 4:1 MUX IC, a 10 Gb/s 1:4 DEMUX IC, four 2.5Gb/s 16:1 MUX LSIs and four 2.5 Gb/s 1:16 DEMUX LSIs. This multi-chip construction is adopted for low power dissipation and high yield. The basic circuit employed in the 10 Gb/s 4:1 MUX/DEMUX ICs is an SCFL circuit using 0.4 μm-gate FETs with a power supply of -5.2 V, and that in 2.5 Gb/s 16:1 MUX/DEMUX LSIs is a DCFL circuit using 0.6 μm-gate FETs with a power supply of -2.0 V. These chip sets have functions for synchronization among these ICs and to enable bit shift to make the system design easier. In the 10 Gb/s 4:1 MUX IC, a timing adjuster is adopted. This timing adjuster can delay the timing of the most critical path by 50 ps. Even if the delay times are out of order due to fluctuations in process, temperature, power supply voltage and other factors, this timing can be revised and the 4:1 MUX IC can operate at 10 Gb/s. Furthermore, a 48-pin quad flat package for 10 Gb/s 4:1 MUX/DEMUX ICs has been newly developed. The measured insertion loss is 1.7 dB (at 10 GHz), and the isolation is less than -20 dB (at 10 GHz). These values are sufficient in practical usage. Measurements of these chip sets show desirable performance at the target 10 Gb/s. The power dissipations of the 64:1 MUX/DEMUX chip sets are 10.3 W and 8.2 W, respectively. These chip sets is expected to contribute to high speed telecommunication systems.
- 社団法人電子情報通信学会の論文
- 1996-04-25
著者
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OHTA Akira
Faculty of Science, Shinshu University
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TANINO Noriyuki
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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TAKAGI Tadashi
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Ishihara Osamu
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Ohta A
Mitsubishi Electric Corp. Itami‐shi Jpn
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SHIMADA Masaaki
Optoelectronic amp Microwave Devices Laboratory, Mitsubishi Electric Corporation
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HIGASHISAKA Norio
Optoelectronic amp Microwave Devices Laboratory, Mitsubishi Electric Corporation
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OHTA Akira
Optoelectronic amp Microwave Devices Laboratory, Mitsubishi Electric Corporation
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HOSOGI Kenji
Optoelectronic amp Microwave Devices Laboratory, Mitsubishi Electric Corporation
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KUBO Kazuo
Information Technology R amp D Center, Mitsubishi Electric Corporation
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HIDANI Fuminobu
Information Technology R amp D Center, Mitsubishi Electric Corporation
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Takagi T
Optical Interconnection Sumiden Laboratory Rwcp
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Ishihara O
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ishihara Osamu
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corp.
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Takagi T
Research Institute Of Electrical Communication Tohoku University
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Kubo K
Mitsubishi Electric Corp. Kamakura‐shi Jpn
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Kubo Kazuo
Pharmaceutical Research Laboratories Pharmaceutical Division Kirin Brewery Co. Ltd.
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Hosogi Kenji
Optoelectronic Amp Microwave Devices Laboratory Mitsubishi Electric Corporation
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Shimada M
Nasda Minato‐ku Jpn
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Hidani Fuminobu
Information Technology R Amp D Center Mitsubishi Electric Corporation
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Tanino N
Mitsubishi Electric Corp. Itami‐shi Jpn
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Tanino Noriyuki
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Ishihara O
Department Of Physics Faculty Of Engineering Yokohama National University
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Higashisaka N
Mitsubishi Electric Corp. Itami‐shi Jpn
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Tanino Noriyuki
Optoelectronic amp Microwave Devices Laboratory, Mitsubishi Electric Corporation
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