A New GaAs Negative Voltage Generator for a Power Amplifier Applied to a Single-Chip T/R-MMIC Front-End
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概要
- 論文の詳細を見る
A new GaAs negative voltage generator suit-able for biasing a GaAs MESFET power amplifier has been successfully developed and applied to a 1.9-GHz single-chip transmit/receive (T/R)-MMIC front-end including a power amplifier, a T/R-switch, and so on. To meet various requirements necessary for integration with a power amplifier, four new circuit techniques are introduced into this generator: (1) comple-mentary charge pump operation to suppress spurious outputs,(2)an SCFL-to-DCFL cross-coupled level shifter to ensure a wide operation voltage range, (3) a level control circuit to reduce output voltage deviation caused by output current, and (4) inter-face and layout designs to achieve sufficient isolation between the power amplifier and the generator. The generator was incorporated into the MMIC front-end, and it was tested with a 30-lead shrink small outline package. With 20-to-500-MHz external input signals of more than - 15 dBm, the generator produces negative voltages from - 1.0 to - 2.6 V for a wide range of supply voltages from l.6 to 4.5 V. The current consumption is as low as 3.2 mA at 3 V. When a 22-dBm output is delivered through the power amplifier biased by the generator, low spurious outputs below -70 dBc are achieved, and gate-bias voltage deviations are suppressed to within 0.06V even when a gate current of - 140 p A flows through the amplifier. The generator also enables high speed operation of charge time below 200 ns,which is effective in TDMA systems such as digital cordless telephone systems. In layout design, electromagnetic simulation was utilized for estimating sufficient isolation between circuits in the MMIC. This negative voltage generator and its application techniques will enable GaAs high-density integration devices as well as single voltage operation of a GaAs MESFET power amplifier.
- 社団法人電子情報通信学会の論文
- 1996-12-25
著者
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Maemura Kosei
High Frequency & Optical Semi-conductor Division Mitsubishi Electric Corporation
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TAKAGI Tadashi
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Takagi T
Optical Interconnection Sumiden Laboratory Rwcp
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Yamamoto K
Mitsubishi Electric Corporation Information Technology R&d Center
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Takagi T
Research Institute Of Electrical Communication Tohoku University
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NAKAYAMA Masatoshi
Information Technology R & D Center, Mitsubishi Electric Corporation
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YOSHII Yutaka
High Frequency & Optical Semi-conductor Division, Mitsubishi Electric Corporation
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Yoshii Yutaka
High Frequency & Optical Semi-conductor Division Mitsubishi Electric Corporation
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Nakayama M
Information Technology R & D Center Mitsubishi Electric Corporation
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Kasai Nobuyuki
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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YAMAMOTO Kazuya
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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MIYAZAKI Yukio
High Frequency & Optical Semi-conductor Division Mitsubishi Electric Corporation
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OGATA Noriko
Information Technology R & D Center
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OTSUBO Mutsuyuki
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Ogata Noriko
Information Technology R & D Center
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Miyazaki Yukio
High Frequency & Optical Semi-conductor Division Mitsubishi Electric Corporation
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Nakayama M
Laboratory Of Nutrition Chemistry Division Of Bioresource And Bioenvironmental Sciences Graduate Sch
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Otsubo Mutsuyuki
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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