A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT (Special Issue on High-Frequency/speed Devices in the 21st Century)
スポンサーリンク
概要
- 論文の詳細を見る
A GSM900/DCS180O dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.
- 社団法人電子情報通信学会の論文
- 1999-11-25
著者
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MORI Kazutomi
Information Technology R&D Center, Mitsubishi Electric Corporation
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Ikeda Y
Mitsubishi Electric Corporation Information Technology R&d Center
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Ikeda Y
Mitsubishi Electric Corp. Kamakura‐shi Jpn
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Mori K
Information Technology R&d Center Mitsubishi Electric Corporation
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Takagi T
Optical Interconnection Sumiden Laboratory Rwcp
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Mori Kazutomi
Information Technology R&d Center Mitsubishi Electric Corporation
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CHOUMEI Kenichiro
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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SHIMURA Teruyuki
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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TAKAGI Tadashi
Information Technology R&D Center, Mitsubishi Electric Corporation
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IKEDA Yukio
Information Technology R&D Center, Mitsubishi Electric Corporation
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ISHIDA Osami
Information Technology R&D Center, Mitsubishi Electric Corporation
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Mori Kensaku
Faculty of Engineering, Nagoya University Graduate School
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Takagi T
Research Institute Of Electrical Communication Tohoku University
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Takagi T
It-21 Center Research Institute Of Electrical Communications Tohoku University
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Takagi Tadashi
Information Technology R&d Center Mitsubishi Electric Corporation
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Ishida O
Information And Communications Univ. Daejon Kor
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Ishida Osami
Information And Communications University
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Shimura Teruyuki
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Choumei Kenichiro
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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