Direct Measurement of the Maximum Operating Region in AlGaAs HBTs for RF Power Amplifiers(Special Issue on Microwave and Millimeter Wave Technology)
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概要
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A microwave waveform measurement system below 18 GHz was developed and verified with a conventional RF measurement. The current and voltage RF waveforms of Al-GaAs HBTs at the fundamental frequency of 1 GHz were directly measured with the system. A new direct method of sweeping and measuring dynamic RF load lines is proposed to measure the operating limits of the device. The maximum operating region was experimentally investigated with this method. The limits with a small input power are found to come from thermal runaway and the avalanche breakdown of the device. With a large input power, the HBT was found to operate beyond the DC limit of thermal runaway. The base ballasting resistance was also found to enhance large signal operating limits beyond those expected from the conventional DC theory.
- 2003-08-01
著者
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SUZUKI Satoshi
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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Yamamoto Kazuya
High Frequency And Optical Device Works Mitsubishi Electric Corporation
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SHIMURA Teruyuki
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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MITSUI Yasuo
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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Mitsui Yasuo
High Frequency And Optical Semiconductor Division Mitsubishi Electric Corporation
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Suzuki Satoshi
High Frequency And Optical Semiconductor Division Mitsubishi Electric Corporation
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Hattori Ryo
High Frequency And Optical Semiconductor Division Mitsubishi Electric Corporation
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Hattori Ryo
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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Nakatsuka Shigenori
Microwave Device Development Department Mitsubishi Electric Corporation
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INOUE Akira
High Frequency and Optical Semiconductor Division, Mitsubishi Electric Corporation
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NAKATSUKA Shigenori
Miyoshi Electronics Corporation
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Shimura Teruyuki
High Frequency And Optical Device Works Mitsubishi Electric Corporation
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Yamamoto Kazuya
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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Inoue Akira
High Frequency And Optical Semiconductor Division Mitsubishi Electric Corporation
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Inoue Akira
High Frequency & Optical Device Works R&d Dept. Mitsubishi Electric Corporation
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INOUE Akira
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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