A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module(Microwaves, Millimeter-Waves)
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概要
- 論文の詳細を見る
This paper describes a 3.5V operation InGaP HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900 MHz triple band handset applications. Conventional GSM amplifiers have a high linear gain of 40dB or more to realize efficiency operation in large gain compression state exceeding at least 5dB. On the other hand, an EDGE amplifier needs a linear operation to prevent signal distortion. This means that a high linear gain amplifier cannot be applied to the EDGE amplifier, because the high gain leads to the high noise power in the receive band (Rx-noise). In order to solve this problem, we have changed the linear gain of the amplifier between GSM and EDGE mode. In EDGE mode, the stage number of the amplifier changes from three to two. To reduce a high gain, the first stage transistors in the amplifier is bypassed through the diode switches. This newly proposed bypass circuit enables a high gain in GSM mode and a low gain in EDGE, thus allowing the amplifier to operate with high efficiency in both modes while satisfying the Rx-noise specification. In conclusion, with diode switches and a band select switch built on the MMIC, the module delivers a P_<out> of 35.5dBm and a PAE of about 50% for GSM900, a 33.4dBm P_<out> and a 45% PAE for GSM1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -85dBm/100kHz, the module also delivers a 29.5dBm P_<out> and a PAE of over 25% for EDGE900, a 28.5dBm P_<out> and a PAE of over 25% for EDGE1800/1900.
- 社団法人電子情報通信学会の論文
- 2005-07-01
著者
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三浦 徹
北大院・地球環境
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SUZUKI Satoshi
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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三浦 徹
北海道大学 大学院地球環境科学研究科
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Miura C
Jst‐presto Jpn
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Yamamoto Kazuya
High Frequency And Optical Device Works Mitsubishi Electric Corporation
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SHIMURA Teruyuki
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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Miura Takeshi
High Frequency And Optical Device Works Mitsubishi Electric Corporation
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Otsuji Jun
Manufacturing Technology Division Mitsubishi Electric Corporation
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Suzuki Satoshi
High Frequency And Optical Semiconductor Division Mitsubishi Electric Corporation
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MIYAZAKI Yukio
High Frequency & Optical Semi-conductor Division Mitsubishi Electric Corporation
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Miyazaki Yukio
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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HATTORI Ryo
Semiconductor Division, Mitsubishi Electric Corporation
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INOUE Akira
High Frequency and Optical Semiconductor Division, Mitsubishi Electric Corporation
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Shimura Teruyuki
High Frequency And Optical Device Works Mitsubishi Electric Corporation
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ASADA Tomoyuki
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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OTSUJI Jun
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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Asada Tomoyuki
High Frequency & Optical Device Works Mitsubishi Electric Corporation
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Yamamoto Kazuya
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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Inoue Akira
High Frequency And Optical Semiconductor Division Mitsubishi Electric Corporation
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Inoue Akira
High Frequency & Optical Device Works R&d Dept. Mitsubishi Electric Corporation
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INOUE Akira
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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