A 1.9-GHz-Band Single-Chip GaAs T/R-MMIC Front-End Operating with a Single Voltage Supply of 2V

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概要

• 論文の詳細を見る

• A single-chip GaAs Transmit/Receive(T/R)-MMIC front-end has been developed which is applicable to 1.9-GHz personal communication terminals such as digital cordless phones. This chip is fabricated using a planar self-aligned gate FET useful for low-cost and high-volume production. The chip integrates RF front-end analog circuits-a power amplifier, a T/R-switch, and a low-noise amplifier. Additionally integrated are a newly developed voltage-doubler negative-voltage generator(VDNVG)and a control logic circuit to control transmit and receive functions, enabling both a single-voltage operation and an enhanced power handling capability of the switch, even under a single low-voltage supply condition of 2V. The power amplifier incorporated onto the chip is capable of delivering a 21 dBm output power at a 39% efficiency, and a 30 dB associated gain with a 2V single power supply in the transmit mode. The gain and efficiency are higher than those of the previously reported amplifier operating with a 2V single power supply. The VDNVG produces a step-up voltage of 2.9V as well as a negative voltage of -1.8V form a 2V power supply, operating with a charge time of less than 0.25μs. The control logic circuit on the chip has a newly designed interface circuit utilizing the step-up voltage and negative voltage, thereby enabling the chip to handle high power outputs over 24 dBm with a low operating voltage of 2V. In the receive mode, a 1.7dB noise figure and a 0.6 dB insertion loss are achieved with a current dissipation of 3.6mA. The developed MMIC, which is the first reported 2V single-voltage operation T/R-MMIC front-end, is expected to contribute to the size and weight reductions in personal communication terminals.

• 社団法人電子情報通信学会の論文
• 1998-07-25

著者

• Yamamoto Kazuya

  High Frequency And Optical Device Works Mitsubishi Electric Corporation

• Otsuji Jun

  Manufacturing Technology Division Mitsubishi Electric Corporation

• Fujii Takayuki

  High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation

• MIYAZAKI Yukio

  High Frequency & Optical Semi-conductor Division Mitsubishi Electric Corporation

• Miyazaki Yukio

  High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation

• MORIWAKI Takao

  High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation

• YOSHI Yutaka

  High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation

• CHOMEI Kenichiro

  High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation

• NISHITANI Kazuo

  High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation

• Yoshi Yutaka

  High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation

• Moriwaki Takao

  High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation

• Chomei Kenichiro

  High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation

• Nishitani Kazuo

  High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation

• Yamamoto Kazuya

  High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation

関連論文

• Direct Measurement of the Maximum Operating Region in AlGaAs HBTs for RF Power Amplifiers(Special Issue on Microwave and Millimeter Wave Technology)
• A 1.9GHz Single-Chip RF Front-End GaAs MMIC with Low-Distortion Cascode FET Mixer (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
• A New GaAs Negative Voltage Generator for a Power Amplifier Applied to a Single-Chip T/R-MMIC Front-End
• Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power
• 3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology(Microwaves, Millimeter-Waves)
• A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module(Microwaves, Millimeter-Waves)
• A 1.9-GHz-Band Single-Chip GaAs T/R-MMIC Front-End Operating with a Single Voltage Supply of 2V
• A Novel Layout Optimization Technique for Miniaturization and Accurate Design of MMICs (Special Issue on High-Frequency/speed Devices in the 21st Century)

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