A Novel Layout Optimization Technique for Miniaturization and Accurate Design of MMICs (Special Issue on High-Frequency/speed Devices in the 21st Century)
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概要
- 論文の詳細を見る
This paper describes a novel layout optimization technique using electromagnetic (EM) simulation. Simple equivalent circuits fitted to EM simulation results are employed in this method, to present a modification guide for a layout pattern. Fitting errors are also investigated with some layout patterns in order to clarify the applicable range of the method, because the errors restrict the range. The method has been successfully adopted to an X-band low noise MMIC amplifier (LNA). The layout pattern of the amplifier was optimized in only two days and the amplifier has achieved target performances-a 35 dB gain and a 1.7 dB noise figure-in one development cycle. The effective chip area has been miniaturized to 4.8 mm^2. The area could be smaller than 70% in comparison with a conventional layout MMIC.
- 社団法人電子情報通信学会の論文
- 1999-11-25
著者
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Chaki Shin
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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Andoh Naoto
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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NISHITANI Kazuo
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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SASAKI Yoshinobu
High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation
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NAKAJIMA Yasuharu
High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation
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Nishitani K
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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Nakajima Yasuharu
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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Sasaki Yoshinobu
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
関連論文
- A 1.9-GHz-Band Single-Chip GaAs T/R-MMIC Front-End Operating with a Single Voltage Supply of 2V
- A Novel Layout Optimization Technique for Miniaturization and Accurate Design of MMICs (Special Issue on High-Frequency/speed Devices in the 21st Century)