3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology(Microwaves, Millimeter-Waves)

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This paper describes two different types of GaAs-HBT compatible, base-collector diode 0/20-dB step attenuators-diode-linearizer type and harmonics-trap type-for 3.5-GHz-band wireless applications. The two attenuators use an AC-coupled, stacked type diode switch topology featuring high power handling capability with low bias current operation. Compared to a conventional diode switch topology, this topology can improve the capability of more than 6dB with the same bias current. In addition, successful incorporation of a shunt diode linearizer and second- and third-harmonic traps into the attenuators gives the IM3 distortion improvement of more than 7dB in the high power ranging from 16dBm to 18dBm even in the 20-dB attenuation mode when IM3 distortion levels are basically easy to degrade. Measurement results show that both the attenuators are capable of delivering power handling capability (P_<0.2dB>) of more than 18dBm with IM3 levels of less than -35dBc at an 18-dBm input power while drawing low bias currents of 3.8mA and 6.8mA in the thru and attenuation modes from 0/5-V complementary supplies. Measured insertion losses of the linearizer-type and harmonics-trap type attenuators in the thru mode are as low as 1.4dB and 2.5dB, respectively.
社団法人電子情報通信学会の論文
2007-07-01