Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power
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概要
- 論文の詳細を見る
This paper describes numerical analyses of resistive mixer operation, followed by measured performances of a V-band (50-75 GHz) monolithic InP HEMT resistive mixer operable with a very low LO power. Our model assumes that the channel conductance of the InP HEMT can be described by three linear functions according to the applied gate voltage. The calculated results obtained with the model have shown That the LO power level required for mixer operation is determined by the gate bias voltage and that a device with abrupt conductance shifts is suited to low LO power operation for a resistive mixer. It is also shown that conversion loss saturation of a resistive mixer is caused by its channel conductance saturation. A V-band monolithic resistive mixer has been designed and fabricated using Coplanar Waveguides (CPW) and a 0.15 μm InP HEMT with abrupt channel shifts. Good agreement between measured and simulated conversion losses are obtained. A minimum conversion loss of 8.4 dB is achieved at the 55 GHz RF-frequency and the -2 dBm LO power. It also exhibits an excellent IF output linearity to allow the 1 dB compression RF input level to be comparable with LO power, indicating good intermodulation performance. It is demonstrated that the proposed simple model of the channel conductance can easily calculate conversion characteristics of a resistive mixer with high accuracy.
- 社団法人電子情報通信学会の論文
- 1999-10-25
著者
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Katoh Takayuki
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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Ishida Toru
Materials And Components Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Yamamoto Kazuya
High Frequency And Optical Device Works Mitsubishi Electric Corporation
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NAKAYAMA Yoshikazu
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
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Katoh T
Nippon Leiz Co. Ltd. Tama‐shi Jpn
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Katoh Takayuki
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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MITSUI Yasuo
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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Ishikawa Tsutomu
Fujitsu Laboratories Lid.
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Katoh Takayuki
Optoelectronic And Microwave Devices Laboratory
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Ishikawa Toshihiro
The Telecom Research Lab. Matsushita Communication Ind. Co. Ltd.
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Nakayama Yoshikazu
Department Of Electrical Engineering College Of Engineering University Of Osaka
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Ishida T
Osaka Prefecture Univ. Sakai‐shi Jpn
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Mitsui Yasuo
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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Ishikawa T
Microwave Device Development Department Mitsubishi Electric Corporation
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Kashiwa Takuo
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation Department Of Physic
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Ishikawa Takahide
High Frequency And Optical Semiconductor Division Mitsubishi Electric Corporation
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ISHIDA Takao
High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation
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Yamamoto Kazuya
Renesas Technology Corp.
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Nakayama Yoshikazu
Department Of Physics And Electronics College Of Engineering Osaka Prefecture University
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Yamamoto Kazuya
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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