An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AlGaAs/InGaAs Pseudomorphic HEMT
スポンサーリンク
概要
- 論文の詳細を見る
An ultra low noise 50-GHz-Band amplifier (LNA) MMIC has been developed using an AlGaAs/InGaAs pseudomorphic HEMT. A noise figure of 1.8 dB with an associated gain of 8.1 dB is achieved at 50 GHz. The noise figure is less than 2.0 dB from 50 GHz to 52.5 GHz. This is the state-of the-art noise figure for low noise amplifiers around 50 GHz. The success of this LN A development came from the excellent HEMT and MMIC technologies and the accurate modeling of active and passive elements. Good agreement between measured and simulated data over the band from 40 GHz to 60 GHz is obtained.
- 社団法人電子情報通信学会の論文
- 1995-03-25
著者
-
YOSHIDA Naohito
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
-
Minami Hiroyuki
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
-
KASHIWA Takuo
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
-
KATOH Takayuki
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
-
KITANO Toshiaki
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
-
KOMARU Makio
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
-
TANINO Noriyuki
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
-
Katoh T
Nippon Leiz Co. Ltd. Tama‐shi Jpn
-
Katoh Takayuki
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
-
Katoh Takayuki
Optoelectronic And Microwave Devices Laboratory
-
Minami Hiroyuki
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corp.
-
Minami H
Ntt Corp. Musashino‐shi Jpn
-
Komaru M
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
-
Komaru Makio
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
-
Kashiwa Takuo
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation Department Of Physic
-
Tanino N
Mitsubishi Electric Corp. Itami‐shi Jpn
-
Tanino Noriyuki
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
-
Yoshida N
Mitsubishi Electric Corp. Itami‐shi Jpn
-
Yoshida Naohito
Optoelectronic And Microwave Devices R&d Laboratory Mitsubishi Electric Corporation
-
Yoshida Naohito
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
-
Tanino Noriyuki
Optoelectronic amp Microwave Devices Laboratory, Mitsubishi Electric Corporation
関連論文
- Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing
- A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
- A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
- An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AlGaAs/InGaAs Pseudomorphic HEMT
- GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer Chip Sets (Special Issue on Ultra-High-Speed LSIs)
- Low Power Dissipation GaAs DCFL 2.5 Gbps 16-bit Multiplexer/Demultiplexer LSIs
- Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
- High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones (Special Issue on Microwave and Millimeterwave High-power Devices)
- Focused Ion Beam Trimming Techniques for MMIC Circuit Optimization (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- A Study on Reliability and Failure Mechanism of T-Shaped Gate HEMTs (Special Section on Reliability)
- Proximity Effect Correction for 1:1 X-Ray Mask Fabrication
- Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power
- Automated Millimeter-Wave On-Wafer Testing System (Special Issue on Microwave and Millimeter Wave Technology)
- Alloyed and Non-Alloyed Ohmic Contacts for AlInAs/InGaAs High Electron Mobility Transistors