Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-10-20
著者
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Mizuguchi Kiyoshi
Semiconductor Group Mitsubishi Electric Corporation
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Hayafuji Norio
Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation
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Hayafuji Norio
Optoelectronic And Microwave Devices R&d Laboratory Mitsubishi Electric Corporation
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MUROTANI Toshio
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
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KIMURA Tatsuya
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
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YOSHIDA Naohito
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
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KANENO Nobuaki
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
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TSUGAMI Mari
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
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MIZUGUCHI Kazuo
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
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IBUKI Sumiaki
Faculty of Engineering, Setsunan University
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Kaneno Nobuaki
Optoelectronic And Microwave Devices R&d Laboratory Mitsubishi Electric Corporation
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Tsugami Mari
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Ibuki S
Faculty Of Engineering Setsunan Univercity
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Ibuki Sumiaki
Faculty Of Engineering Setsunan University
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Kimura Tatsuya
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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Kimura Tatsuya
Optoelectronic And Microwave Devices R&d Laboratory Mitsubishi Electric Corporation
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Yoshida Naohito
Optoelectronic And Microwave Devices R&d Laboratory Mitsubishi Electric Corporation
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Mizuguchi Kazuo
Optoelectronic And Microwave Devices R&d Laboratory Mitsubishi Electric Corporation
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Murotani T
Mitsubishi Electric Corp. Hyogo
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Yoshida Naohito
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
関連論文
- Crack Propagation and Mechanical Fracture in GaAs-on-Si
- Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si
- Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing
- GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System
- Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of In_xGa_As-GaAs_yP_
- A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
- A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
- An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AlGaAs/InGaAs Pseudomorphic HEMT
- Microscopic Analysis of the Degradation Mechanism of Gallium Arsenide Metal-Semiconductor Field-Effect Transistor
- Light Emission and Surface States Annealing on GaAs Metal Semiconductor Field-Effect Transistor
- Decrease in Surface States on GaAs Metal-Semiconductor Field-Effect Transistor by High Temperature Operation
- Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
- Comparison between the photoluminescence Properties of LaPO_4 : Tb, Ce Phosphor under 254nm Excitation and those under 365nm Excitation
- Photoluminescence of Eu^ in CaS:Eu Phosphor
- Photoluminescence on Li-Codoped ZnS:Tm Phosphor
- Time-Resolved Luminescence from (La, Ce)PO_4:Tb Phosphors
- Metalorganie Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismethylcyelopentadienyl-Berylium
- Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy
- Alloyed and Non-Alloyed Ohmic Contacts for AlInAs/InGaAs High Electron Mobility Transistors
- Uniform Fabrication of Highly Reliable, 50-60 mW-Class, 685 nm, Window-Mirror Lasers for Optical Data Storage
- Photoluminescence of Eu^ and Eu^ Centers in CaS:Eu,Na Phosphors