Crack Propagation and Mechanical Fracture in GaAs-on-Si
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-03-15
著者
-
Hayafuji Norio
Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation
-
Hayafuji Norio
Optoelectronic And Microwave Devices R&d Laboratory Mitsubishi Electric Corporation
-
KIZUKI Hirotaka
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
-
MIYASHITA Motoharu
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
-
KADOIWA Kaoru
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
-
NISHIMURA Takashi
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
-
OGASAWARA Nobuyoshi
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
-
KUMABE Hisao
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
-
MUROTANI Toshio
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation
-
TADA Akiharu
Okayama University of Science
-
Kizuki Hirotaka
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation:(present) Heinrich-h
-
Kizuki Hirotaka
Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation
-
Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
-
Miyashita Motoharu
Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation
-
Miyashita Motoharu
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
-
Ogasawara Nobuyoshi
Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation
-
Nishimura T
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Kadoiwa Kaoru
Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation
-
Kumabe H
Mitsubishi Electric Corp. Hyogo
-
Murotani T
Mitsubishi Electric Corp. Hyogo
-
Niina T
Microelectronics Research Center Sanyo Electric Co. Ltd.
関連論文
- Crack Propagation and Mechanical Fracture in GaAs-on-Si
- Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si
- Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing
- GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System
- Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of In_xGa_As-GaAs_yP_
- Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In_ Ga_ As/GaAs(311)B Quantum Dot Arrays(Optical Properties of Condensed Matter)
- Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
- Effects of Oxygen Concentration and Annealing Sequence on Microstructure of Separation by Implanted Oxygen Wafer with High-Temperature Annealing
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Aluminum Chemical Vapor Deposition Technology for High Deposition Rate and Surface Morphology Improvement
- Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi_2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor
- High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
- Surface Structure of TiO_2-Terminated SrTiO_3(001) Sudied by Medium Energy Ion Scattering and Ultraviolet Photoelectron Spectroscopy
- Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM
- Mechanism of Temperature Dependence of Piezoelectric Properties for Pb(Zr,Ti)O_3
- Photochemical Hole Burning of Quinone Derivatives : Future Technology
- Photochemical Hole Burning of Quinone Derivatives
- Direct Writing of Silicon Lines by Pyrolytic Argon Laser CVD
- The Depth Profiling of the Crystal Quality in Laser-Annealed Polycrystalline Si Films by Raman Microprobe
- Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe
- Evaluation and Control of Grain Boundaries in Laser-Recrystallized Polysilicon Islands for Device Fabrication : A-6: SILICON CRYSTALS
- Dependence of SiC Blue Light-Emitting Diode Efficiency on the p-Type Layer Growth Temperature
- Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices
- Scanning Capacitance Microscopy as a Characterization Tool for Semiconductor Devices
- Hign-Power Long-Cavity T^3 Laser with a Very Narrow Beam
- Time-Resolved Photoluminescence Study on a Hetero Interface Formed by Direct Regrowth of GaAs on an Al_Ga_As Surface Prepared by an In Situ HCl Gas Etching Process
- Fabrication of GaAs/AlGaAs GRIN-SCH Lasers with Newly Developed Ridge Waveguide
- Fabrication of SiC Blue LEDs Using Off-Oriented Substrates
- Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser Grown by MBE
- P-Type Conducting ZnSe and ZnSSe by N2-Gas Doping During Molecular Beam Epitaxy
- P- Type Conducting ZnSe and ZnSSe by N_2-Gas Doping during Molecular Beam Epitaxy