Effects of Oxygen Concentration and Annealing Sequence on Microstructure of Separation by Implanted Oxygen Wafer with High-Temperature Annealing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-01-15
著者
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Yamaguchi Y
Core Technology Laboratory Mitsui Kinzoku
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Koyama H
Waseda Univ. Tokyo Jpn
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KAWAZU Satoru
Ryoden Semiconductor System Engineering Corporation
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MIYATAKE Hiroshi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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YAMAGUCHI Yasuo
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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KOYAMA Hiroshi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Miyatake Hiroshi
Lsi R&d Lab. Mitsubishi Electric Corp.
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Miyatake Hiroshi
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Yamaguchi Yasuo
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Yamaguchi Y
Fuji Xerox Co. Ltd. Kanagawa Jpn
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Nishimura Tadashi
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Koyama Hiroshi
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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