Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi_2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-10-15
著者
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Lee C‐h
Lg Electronics Inst. Technol. Seoul Kor
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Masu K
Research Institute Of Electrical Communication Tohoku University
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Masu Kazuya
Integrated Research Institute
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Masu Kazuya
Research Institute Of Electrical Communication Tohoku University
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Lee C‐h
Keimyung Univ. Daegu Kor
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TSUBOUCHI Kazuo
Research Institute of Electrical Communication, Tohoku University
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Masu Kazuya
東工大
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YOKOYAMA Michio
Research Institute of Electrical Communication, Tohoku University
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LEE Chang-Hun
Research Institute of Electrical Communication, Tohoku University
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NISHIMURA Takamasa
Research Institute of Electrical Communication, Tohoku University
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Matsuhashi Hideki
Research Institute of Electrical Communication, Tohoku University
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Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Lee Chang-hun
Research Institute Of Electrical Communication Tohoku University
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Nishimura T
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tsubouchi K
Tohoku Univ. Sendai Jpn
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Yokoyama M
Kawasaki Heavy Ind. Ltd. Chiba Jpn
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Matsuhashi H
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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Niina T
Microelectronics Research Center Sanyo Electric Co. Ltd.
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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