Comprehensive Study of Plasma Pretreatment Process for Thin Gate Oxide (< 10 nm) Fabricated by Electron Cyclotron Resonance Plasma Oxidation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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Lee C‐h
Lg Electronics Inst. Technol. Seoul Kor
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Wang S‐w
Natonal Chiao Tung Univ. Hsinchu Twn
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Lee C‐h
Keimyung Univ. Daegu Kor
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CHANG Kow-Ming
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University
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Yeh Ta-hsun
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University An
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Chang Kow-ming
Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University And
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LI Chii-Horng
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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FAHN Fu-Jier
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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WANG Shih-Wei
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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Fahn Fu-jier
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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