The Characteristics of Chemical Vapor Deposited Amorphous-like Tungsten Film as a Gate Electrode

スポンサーリンク

概要

• 論文の詳細を見る

• Tungsten films are often advantageously formed by the chemical vapor deposition system which using WF_6 gas through SiH_4 or H_2 reduction. The fluorine species will diffuse into poly-Si/SiO_2/(Si) multilayers by a driving force which is the reaction of WF_6 and poly-Si gate. When too many fluorine atoms diffused into the gate oxide, the fluorine atoms will cause more strain in the gate oxide and the electrical characteristics of device will shift. An amorphous-like tungsten layer was deposited at a flow rate ratio of 2.5 of SiH_4/WF_6. The driving force in the amorphous-like tungsten film deposition is far less than that in selective tungsten film deposition; therefore, the concentration of fluorine atoms in the amorphous-like tungsten film is much less than in the selective tungsten film. We proved that only few fluorine atoms were incorporated in amorphous-like tungsten film which has good characteristics in the application of gate electrode.

• 社団法人応用物理学会の論文
• 1998-09-15

著者

• Chang Kow-ming

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University And

• Fu C‐m

  Department Of Physics National Kaohsiung Normal University

• Fu Chao-ming

  Department Of Physics National Kao Hsiung Normal University

• LAIN Kuen-Der

  Department of Physics, National Kaohsiung Normal University

• Deng I‐c

  Kuang Wu Inst. Technol. Taipei Twn

• Lain Kuen-der

  Department Of Physics National Kaohsiung Normal University

• Deng I-chung

  Department Of Electronic Engineering Kuang Wu Institute Of Technology

• SHIH Chieh-Wen

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University a

• Shih Chieh-wen

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University An

関連論文

• Preparation and Electrornic Properties of YBa_2Cu_3O_x Films with Controlled Oxygen Stoichiometries
• Reactive Ion Pretreatment Technique to Improve the Ashing Resistance of Low Dielectric Constant High Carbon Content Polymer
• Comprehensive Study of Plasma Pretreatment Process for Thin Gate Oxide (< 10 nm) Fabricated by Electron Cyclotron Resonance Plasma Oxidation
• A Simple and Efficient Pretreatment Technology for Selective Tungsten Deposition in Low-Pressure Chemical Vapor Deposition Reactor
• Activity Coefficients of Electrons and Holes in Degenerate Semiconductors with Nonuniform Composition
• Thermal Stability of Amorphous-like WN_x/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p^+-Si Contact System
• Suppression of Fluorine Impurity in Blanket Chemical Vapor Deposited Tungsten Film for Via Fills with A Novel Two-step Deposition Technique
• Influence of Sheet Resistance on N_2O-Grown Polyoxide
• The Characteristics of Chemical Vapor Deposited Amorphous-like Tungsten Film as a Gate Electrode
• Using NH_3 Plasma Pretreatment to Improve the Characteristics of Organic Spin-on Low-k nlaterials for Copper Metallization : Instrumentation, Measurement, and Fabrication Technology
• Application of In-Situ Nitrogen Plasma Treated Amorphous-like Tungsten Silicide Film as Barrier Material in the Application of Copper Gate Electrode
• Characteristics of Zirconium Oxide Gate Ion-Sensitive Field-Effect Transistors
• Suppress Copper Diffusion through Barrier Metal-Free Structure by Implantation of Nitrogen Atom into Low-$K$ Material

もっと見る 閉じる

スポンサーリンク