Characteristics of Zirconium Oxide Gate Ion-Sensitive Field-Effect Transistors

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概要

• 論文の詳細を見る

• In this study, the zirconium oxide (ZrO2) membrane has been successfully applied as a pH-sensitive layer for ion-sensitive field-effect transistors (ISFETs). It exhibited an excellent response range of 56.7–58.3 mV/pH from the fixed current measurement using HP4156A. The ZrO2 membrane prepared by direct current (DC) sputtering was used as a pH-sensitive film that showed good surface adsorption with oxide and silicon. The pH sensitivities slightly decreased in 1 M NaCl solution; however, the device showed a perfect linear response of 52.5 mV/pH. The linear pH sensitivity response was measured between pH 1 to 13 in a buffer solution that was provided by Riedel–deHän.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-07-15

著者

• Chang Kow-ming

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University And

• Chou Ting-Wei

  Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 30050

• Chao Kuo-Yi

  Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 30050

• Chang Chin-Tien

  Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 30050

• Chang Kow-Ming

  Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 30050

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