Using NH_3 Plasma Pretreatment to Improve the Characteristics of Organic Spin-on Low-k nlaterials for Copper Metallization : Instrumentation, Measurement, and Fabrication Technology

スポンサーリンク

概要

• 論文の詳細を見る

• Organic low-k materials have got more attention for reducing integrated circuits RC delay time. A serious problem, indegradation of organic low-k materials is induced by ashing step. In this study, an NH_3 plasma-treated spin-on low-k material was used as a dielectric layer for Cu metalization. After NH_3 plasma treatment for 10 min, the low dielectric constant films can prevent ashing damage without changing their original dielectric constant. An extra advantage of blocking copper diffusion was achieved after NH_3 plasma treatment. The improvement of low dielectric constant films was due to an oxynitride film formed on the surface of low dielectric constant film. This oxynitride film also prevents the Cu diffasion/migration into the underlying dielectric and plays a role of passive diffasion barriers.

• 社団法人応用物理学会の論文
• 2001-11-15

著者

• Chang Kow-ming

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University And

• Deng I.-chung

  Department Of Electronic Engineering Kuang Wu Institute Of Technology And Commerce

• Tsai Yao-pin

  Department Of Electronic Engineering Kuang Wu Institute Of Technology And Commerce

• Tseng Ming-hau

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University And

• YEH Sy-Jer

  Department of Electronic Engineering and Institute of Electronics, National Chiao Tung University an

• Yeh Sy-jer

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University And

関連論文

• Reactive Ion Pretreatment Technique to Improve the Ashing Resistance of Low Dielectric Constant High Carbon Content Polymer
• Comprehensive Study of Plasma Pretreatment Process for Thin Gate Oxide (< 10 nm) Fabricated by Electron Cyclotron Resonance Plasma Oxidation
• A Simple and Efficient Pretreatment Technology for Selective Tungsten Deposition in Low-Pressure Chemical Vapor Deposition Reactor
• Activity Coefficients of Electrons and Holes in Degenerate Semiconductors with Nonuniform Composition
• Thermal Stability of Amorphous-like WN_x/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p^+-Si Contact System
• Suppression of Fluorine Impurity in Blanket Chemical Vapor Deposited Tungsten Film for Via Fills with A Novel Two-step Deposition Technique
• Influence of Sheet Resistance on N_2O-Grown Polyoxide
• The Characteristics of Chemical Vapor Deposited Amorphous-like Tungsten Film as a Gate Electrode
• Using NH_3 Plasma Pretreatment to Improve the Characteristics of Organic Spin-on Low-k nlaterials for Copper Metallization : Instrumentation, Measurement, and Fabrication Technology
• Characteristics of Zirconium Oxide Gate Ion-Sensitive Field-Effect Transistors

スポンサーリンク