Influence of Sheet Resistance on N_2O-Grown Polyoxide

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概要

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• The influence of sheet resistance on polyoxide was explored in this paper.Polyoxides were grown on polysilicon with different sheet resistances(30-150Ω/cm^2).It was found that as the sheet resistance increased from 30Ω/cm^2 to 50Ω/cm^2, the characteristics of polyoxide was improved with higher breakdown electric field and higher charge-to-breakdown.However, as the sheet resistance continued to increase(>110Ω/cm^2), the characteristics of polyoxide became worse again.This phenomenon is explained by phosphorus concentration incorporated into polyoxide.Phosphorus concentration helps to form a smoother polyoxide/polysilicon interface.Thus, the characteristics of polyoxide with high sheet resistance(>110Ω/cm^2)was worse than that of polyoxide with low sheet resistance due to a rough polyoxide interface.However, too much phosphorus incorporated into polyoxide degrades the quality of polyoxide.So the characteristics of polyoxide with low sheet resistance(>50Ω/cm^2)became worse again.Consequently, high quality of polyoxide should be grown on the polysilicon with middle sheet resistance(>50-110Ω/cm^2).

• 社団法人応用物理学会の論文
• 2000-04-15

著者

• CHANG Kow-Ming

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University

• Chang Kow-ming

  Department Of Electronic Engineering And Institute Of Electronics National Chiao Tung University And

• Lee Tzyh-cheang

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• LIU Shang-Hsuan

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University

• Liu Shang-hsuan

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

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