Application of In-Situ Nitrogen Plasma Treated Amorphous-like Tungsten Silicide Film as Barrier Material in the Application of Copper Gate Electrode

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概要

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• An amorphous-like tungsten suicide film, deposited by chemical vapor deposition at a higher flow ratio of 2.5 of WF_6/SiH_4, was used as the barrier layer in the copper gate electrode. This film processes superior barrier characteristics to those of the typical tungsten film at a lower flow ratio of 0.4 of WF_6/SiH_4 because it lacks the fast diffusion paths of columnar grain boundaries. We proved that the film successfully suppressed copper atom diffusion toward the gate oxide during annealing at 600℃ for 30 mm. We also found that the amorphous-like tungsten silicide film exhibits better barrier characteristics after in-situ nitrogen plasma treatment at 300℃ for 5mm.

• 社団法人応用物理学会の論文
• 2002-11-15

著者

• Deng I-chung

  Department Of Electronic Engineering Kuang Wu Institute Of Technology

関連論文

• Thermal Stability of Amorphous-like WN_x/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p^+-Si Contact System
• The Characteristics of Chemical Vapor Deposited Amorphous-like Tungsten Film as a Gate Electrode
• Application of In-Situ Nitrogen Plasma Treated Amorphous-like Tungsten Silicide Film as Barrier Material in the Application of Copper Gate Electrode
• Suppress Copper Diffusion through Barrier Metal-Free Structure by Implantation of Nitrogen Atom into Low-$K$ Material

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