Suppress Copper Diffusion through Barrier Metal-Free Structure by Implantation of Nitrogen Atom into Low-$K$ Material

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概要

• 論文の詳細を見る

• Currently, Cu and spin-on organic low-$k$ polymer are the leading candidates for ultra-large-scale integrated circuits (ULSI) technology. A device integrated with low-$k$ material and Cu film is capable of improving its performance. Serious degradation is induced in the device when Cu diffuses into the dielectric layer during post-heating and under an applied electric field. Methyl-phenyl silsesquioxane (MSQ), a spin-on organic low-$k$ material, can successfully suppress Cu diffusion without using a barrier metal by implanting N into itself. The dielectric constant and barrier capability of MSQ film could further be improved by F and N co-implantation. A metal insulator semiconductor (MIS) capacitor structure was used in this study and it showed better barrier capability and lower leakage current after N and F were co-implanted into the low-$k$ material.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-03-15

著者

• Deng I-chung

  Department Of Electronic Engineering Kuang Wu Institute Of Technology

• Deng I-Chung

  Department of Electronic Engineering, Kuang Wu Institute of Technology, Taipei 112, Taiwan, R.O.C.

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• The Characteristics of Chemical Vapor Deposited Amorphous-like Tungsten Film as a Gate Electrode
• Application of In-Situ Nitrogen Plasma Treated Amorphous-like Tungsten Silicide Film as Barrier Material in the Application of Copper Gate Electrode
• Suppress Copper Diffusion through Barrier Metal-Free Structure by Implantation of Nitrogen Atom into Low-$K$ Material

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