Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Lee C‐h
Lg Electronics Inst. Technol. Seoul Kor
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Masu K
Research Institute Of Electrical Communication Tohoku University
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Masu Kazuya
Integrated Research Institute
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Masu Kazuya
Research Institute Of Electrical Communication Tohoku University
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Lee C‐h
Keimyung Univ. Daegu Kor
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TSUBOUCHI Kazuo
Research Institute of Electrical Communication, Tohoku University
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Masu Kazuya
東工大
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YOKOYAMA Michio
Research Institute of Electrical Communication, Tohoku University
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LEE Chang-Hun
Research Institute of Electrical Communication, Tohoku University
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Matsuhashi Hideki
Research Institute of Electrical Communication, Tohoku University
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GOTOH Akio
Research Institute of Electrical Communication, Tohoku University
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Lee Chang-hun
Research Institute Of Electrical Communication Tohoku University
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Tsubouchi K
Tohoku Univ. Sendai Jpn
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Yokoyama M
Kawasaki Heavy Ind. Ltd. Chiba Jpn
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Matsuhashi H
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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Gotoh Akio
Research Institute Of Electrical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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