Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300℃ Using Tetraethyl Orthosilicate

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Masu Kazuya

  Integrated Research Institute

• Masu Kazuya

  Research Institute Of Electrical Communication Tohoku University

• TSUBOUCHI Kazuo

  Research Institute of Electrical Communication, Tohoku University

• Mikoshiba N

  Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L

• Mikoshiba Nobuo

  Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L

• Mikoshiba Nobuo

  Research Institute Of Electrical Communication Tohoku University

• Suzuki Nobuhiro

  The Faculty Of Engineering Tokyo Institute Of Technology

• Tsubouchi K

  Tohoku Univ. Sendai Jpn

• Tsubouchi Kazuo

  Research Institute Of Electrical Communicaiton Tohoku University

• Suzuki N

  Hitachi Ltd. Tokyo Jpn

• SUZUKI Nobumasa

  Production Engineering Research Laboratory, Canon Inc.

• Suzuki Nobumasa

  Production Engineering Research Laboratory Canon Inc.

• Mikoshiba Nobuo

  Research Institute Of Electorical Communication Tohoku University

• TSUBOUCHI Kazuo

  Research Institute of Electric Communication (RIEC), Tohoku University

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