Suzuki Nobumasa | Production Engineering Research Laboratory Canon Inc.

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概要

• 同名の論文著者
• Production Engineering Research Laboratory Canon Inc.の論文著者

関連著者

• Suzuki Nobumasa

  Production Engineering Research Laboratory Canon Inc.

• Masu Kazuya

  Integrated Research Institute

• Masu Kazuya

  Research Institute Of Electrical Communication Tohoku University

• TSUBOUCHI Kazuo

  Research Institute of Electrical Communication, Tohoku University

• Suzuki Nobuhiro

  The Faculty Of Engineering Tokyo Institute Of Technology

• Tsubouchi K

  Tohoku Univ. Sendai Jpn

• Tsubouchi Kazuo

  Research Institute Of Electrical Communicaiton Tohoku University

• Suzuki N

  Hitachi Ltd. Tokyo Jpn

• SUZUKI Nobumasa

  Production Engineering Research Laboratory, Canon Inc.

• TSUBOUCHI Kazuo

  Research Institute of Electric Communication (RIEC), Tohoku University

• Mikoshiba N

  Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L

• Mikoshiba Nobuo

  Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L

• Mikoshiba Nobuo

  Research Institute Of Electrical Communication Tohoku University

• Mikoshiba Nobuo

  Research Institute Of Electorical Communication Tohoku University

• Masu K

  Research Institute Of Electrical Communication Tohoku University

• Masu Kazuya

  東工大

• Yoshikawa T

  Division Of Mechanical Engineering Department Of Mechanical Science And Bioengineering Graduate Scho

• Shindo Hitoshi

  Device Development Center Canon Inc.

• YOSHIKAWA Toshiaki

  Production Engineering Research Laboratory, Canon Inc.

• Yoshikawa Toshiaki

  Production Engineering Research Laboratory Canon Inc.

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著作論文

• High-Rate Deposition of High-Quality Silicon Nitride Film at Room Temperature by Quasi-Remote Plasma Chemical Vapor Deposition
• Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300℃ Using Tetraethyl Orthosilicate
• Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
• Low Temperature Deposition of Gate Silicon Dioxide Film for Thin Film Transistors by Photoassisted Remote Plasma Chemical Vapor Deposition Method

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