Low Temperature Deposition of Gate Silicon Dioxide Film for Thin Film Transistors by Photoassisted Remote Plasma Chemical Vapor Deposition Method

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概要

• 論文の詳細を見る

• High quality silicon dioxide films with low leakage current and low surface charge density were deposited by a photoassisted remote plasma chemical vapor deposition (PAP-CVD) method at 330℃. Oxygen gas excited in a plasma which is kept apart from the wafer, was transported to the wefer and reacted with monosilane gas to generate intermediates. The absorbed intermediates on the wafer were photoexcited to produce silicon dioxide films. Since the energy and the flux of incident ions to the wafer are suppressed to be as low as 1.4 eV and 1.3 × 10^<13> cm^<-2>s^<-1>, respectively, high-quality films with low leakage current and low surface charge density were successfully deposited at low temperature. The silicon dioxide film fabricated by the PAP-CVD method is suitable for use as the gate insulator of a thin film transistor (TFT).

• 社団法人応用物理学会の論文
• 1996-10-15

著者

• Shindo Hitoshi

  Device Development Center Canon Inc.

• SUZUKI Nobumasa

  Production Engineering Research Laboratory, Canon Inc.

• Suzuki Nobumasa

  Production Engineering Research Laboratory Canon Inc.

関連論文

• High-Rate Deposition of High-Quality Silicon Nitride Film at Room Temperature by Quasi-Remote Plasma Chemical Vapor Deposition
• Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300℃ Using Tetraethyl Orthosilicate
• Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
• Low Temperature Deposition of Gate Silicon Dioxide Film for Thin Film Transistors by Photoassisted Remote Plasma Chemical Vapor Deposition Method

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