Quasi-Nondestructive Observation of Oxidation-Induced Stacking Faults in Silicon by Photoacoustic Topography
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-01-20
著者
-
TSUBOUCHI Kazuo
Research Institute of Electrical Communication, Tohoku University
-
Mikoshiba N
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
-
Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
-
NAKAMURA Hiromichi
Research Institute of Electrical Communication, Tohoku University
-
Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
-
TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
関連論文
- Anomalous Three-LO-Phonon Assisted Cyclotron Resonance with Spin-Flip Transitions in n-InSb
- Switched-Current Analog Programmable Filter for Software-Defined Radio
- All Digital Wireless Modem LSI for Software Defined Radio
- Lower Boundary of Supply Voltage in Digital ULSI Based on the Communication Theory
- Novel Low-Power Switched-Current Matched Filter for Direct-Sequence Code-Division-Multiple-Access Wireless Communication
- Full-Duplex Asynchronous Spread Spectrum Modem Using a SAW Convolver for 2.4-GHz Wireless LAN (Special Issue on Personal, Indoor and Mobile Radio Communications)
- Novel Narrowband Interference Rejection for an Asynchronous Spread Spectrum Wireless Modem Using a SAW Convolver (Special Issue on Spread Spectrum Techniques and Applications)
- Novel FFT LSI for Orthogonal Frequency Division Multiplexing Using Current Mode Circuit
- Novel FFT LSI for OFDM Using Current Mode Circuit
- Surface Acoustic Wave Properties of Atomically Flat-Surface Aluminium Nitride Epitaxial Film on Sapphire
- SS-CDMA Flexible Wireless Network: Implementation of Approximately Synchronized CDMA Modem for Uplink
- Design and Implementation of Spread Spectrum Wireless Switch with Low Power Consumption(Special Section on Fundamentals of Information and Communications)
- Growth of Atomically Flat-Surface Aluminum Nitride Epitaxial Film by Metalorganic Chemical Vapor Deposition
- Submillimeter-Wave Response of Nb-YBaCuO Point-Contact Josephson Junctions Using YBaCuO Thin Films Prepared by CVD
- Simulation of Shapiro Steps in a Josephson Junction Based on the Microscopic Theory of the Tunnel Junction
- Anomalous Corrugation Height of Atomically Resolved AFM Images of a Graphite Surface
- Simultaneous Observation of Atomically Resolved AFM/STM Images of a Graphite Surface
- Surface Conductance of Metal Surfaces in Air Studied with a Force Microscope
- Submillimeter-Wave Response of Nb-YBaCuO Point-Contact Josephson Junctions : Electrical Properties of Condensed Matter
- Damping Factor of the Riedel Peak in Brikge-Type Josephoson Junctions
- Frequency Dependence of the Submillimeter-Wave Response in the Tunnel-Type and Bridge-Type Josephson Junctions
- Correlation between Types of Junction and Submillimeter-Wave Responses in Point-Contact Josephson Junctions
- Frequency Dependence of the ac Josephson Effect in Nb Point Contacts in the Submillimeter-Wave Region
- Computer Simulation of Vortex Motion in a Josephson Junction Induced by Phonon Injection
- Vortex Motion in a Josephson Junction Induced by Phonon Injection
- A High-Efficiency CMOS Class-B Push-Pull Power Amplifier for Code-Division-Multiple-Access Cellular System
- Aluminum Chemical Vapor Deposition Technology for High Deposition Rate and Surface Morphology Improvement
- Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi_2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor
- Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor
- Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET
- Construction of a Scanning Tunneling Microscope for Electrochemical Studies
- Multilayer Piezoelectric Actuators for Scanning Tunneling Microscope : High Power Ultrasonics
- Interacting Self-Timed Pipelines and Elementary Coupling Control Modules
- A 5GHz Band Low Noise and Wide Tuning Range Si-CMOS VCO with a Novel Varactors Pair Circuit
- Temperature Dependence of the Inelastic Scattering Time in Metallic n-GaAs
- Determination of Physical Parameters of the Anderson Localization in Metallic n-InSb
- Effects of the Anderson Localization on Magnetoconductivity in Metallic n-GaAs
- Voltage-Dependence of Scanning Tunneling Microscopy on Titanium Surface in Air
- Novel Low-Power Switched Current Matched Filter for DS-CDMA Wireless Communication
- Atomic Images of Disordered Regions in Graphite Crystals Obtained with Scanning Tunneling Microscope
- Atomic Corrugation of Kish Graphite in Air Measured with Scanning Tunneling Microscope
- In-Situ Counting of Process-Induced Particles
- Particle Counting in Semiconductor Processing Gas and Apparatus with a New Flow-Cell-Type Laser Particle Counter
- Single Crystallization of Aluminum on SiO_2 by Thermnal Annealing and Observation with Scanning μ-RHEED Microscope
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI (SOLID STATE DEVICES AND MATERIALS 1)
- High-Rate Deposition of High-Quality Silicon Nitride Film at Room Temperature by Quasi-Remote Plasma Chemical Vapor Deposition
- Theoretical Analysis for a New Package Concept : High-Speed Heat Removal for VLSI Using an AlN Heat-Spreading Layer and Microchannel Fin
- Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing (SOLID STATE DEVICES AND MATERIALS 1)
- Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships
- In Situ Observation of Electromigration in Cu Film Using Scanning μ-Reflection High-Energy Electron Diffraction Microscope
- Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300℃ Using Tetraethyl Orthosilicate
- Evaluation of LaB_6 Thin Film as Low-Work-Function Gate for MOSFET Operated at Low Temperature
- Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
- Temperature-Scaling Theory for Low-Temperature-Operated MOSFET with Deep-Submicron Channel : Semiconductors and Semiconductor Devices
- Pyrolysis and Photolysis of Trimethylaluminum
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Nondestructive and Noncontact Evaluation of Semiconductors by Photothermal Radiometry : Photoacoustic Spectroscopy
- Observation of Nonradiative Processes in Benzene Vapor by Photoacoustic Spectroscopy
- Quasi-Nondestructive Observation of Oxidation-Induced Stacking Faults in Silicon by Photoacoustic Topography
- Images of Barrier Layer of Anodic Aluminum Oxide in Air Obtained with Scanning Tunneling Microscope
- Phonon-Assisted Cyclotron Resonance Strongly Dependent on Surface Condition in n-InSb
- Nonlinear Interaction of Surface Acoustic Waves with the Josephson Junction
- Oxide Growth of Tin Films by Modified rf Plasma Oxidation Method
- Convolution and Acoustoelectric Effect by Elastic Surface Waves in Coupled Semiconductor-Piezoelectric System
- Transmission Electron Microscopic Observation of AlN/α-Al_2O_3 Heteroepitaxial Interface with Initial-Nitriding AlN Layer
- Area-Selective Aluminum Patterning Using Atomic Hydrogen Resist
- Low Insertion Loss Surface Acoustic Wave Matched Filter with Low Sidelobe Sequence and Its Application for Spread Spectrum Communication
- Oscillation of Two-Dimensional Modes in Transverse-Distributed-Feedback Cavity Lasers
- Tunneling-Type Temperature Dependence of Critical Current in Nb-Sn Point Contact
- Effect of the Shunt Capacitance on the ac Josephson Effect in Nb Point Contacts
- Peak Shifts ot the Photo-Induced Magnetophonon Resonance in n-InSb at 4.2 K
- 4-5 μm Emissions from 1.3-μm and 1.5-μm InGaAsP/InP Lasers : Evidence for Excitations in Split-Off Valence Band
- Saturable Inter-Valence-Band Absorptions in 1.3μm-InGaAsP Lasers : B-4: LD AND LED-2
- Generation Mechanisms of Current-Injection-Induced Acoustic (CIA) Signals in Semiconductor Lasers : Photo-Acoustic Spectroscopy
- Hole-Burnings Observed at High Energy Tails in Spontaneous Emission Spectra from 1.3 μm-InGaAsP/InP Lasers
- Analysis of Intrinsic Saturable Absorption in InGaAsP/InP Diode Lasers
- Investigation of 1.3-μm InGaAsP/InP Lasers by the Measurement of Current-Injection-Induced Acoustic (CIA) Signals
- Observation of Acoustic Signals from Semiconductor Lasers
- Note on Phonon Spectroscopy with Acoustoelectric Domain and Brillouin-Scattering Technique
- Contribution of the Imaginary Part of Photoelastic Constants to Resonant Brillouin Scattering in CdS
- Photoacoustic Measurement of Non-radiative States and Defects in CdS and Si with ZnO Transducer
- Note on the Selection Rule of Resonant Brillouin Scattering in CdS at Room Temperature
- Matched Filter Type SET Circuit for Room Temperature Operation
- Reliability of Single Electron Transistor Circuits Based on E_b/N_0-Bit Error Rate Characteristics
- Low-Temperature Metal-Oxide-Semiconductor Field-Effect Transistor Operation by Temperature Scaling Theory
- (Invited) GaAs Acoustic Distributed Feedback Lasers : B-4: LASERS (1)
- Frequency Dependence of Lattice Attenuation of Ultrasonic Waves in CdS
- SAW Convolver Utilizing Sezawa Wave in a Monolithic ZnO/Si Configuration : Communication Devices and Materials
- Tunable Surface-Acoustic-Wave Generator on a Monolithic MIS Structure : C-5: ACOUSTIC DEVICES
- Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition
- Optical Absorption and Cathodoluminescence of Epitaxial Aluminum Nitride Films
- Electronic Conduction in Epitaxial Aluminum Nitride Films on Silicon
- Logarithmic Temperature Dependence of the Relaxation Time and Conductivity in Three-Dimensional Disordered Systems
- Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on α-Al_2O_3 Substrate : Surfaces, Interfaces and Films
- Zero Temperature Coefficient Surface-Acoustic-Wave Delay Lines on AlN/Al_2O_3
- High-Frequency and Low-Dispersion Characteristics of Surface Acoustic Waves on AlN/Al_2O_3
- Minority-Carrier Response in MIS Surface-Acoustic-Wave Convolver
- Investigation of Nonradiative Processes and Defects in Semiconductors by Photoacoustic and Photo-Thermal-Radiation Techniques
- 60-GHz Band Copper Ball Vertical Interconnection for MMW 3-D System-in-Package Front-End Modules