Nonlinear Interaction of Surface Acoustic Waves with the Josephson Junction
スポンサーリンク
概要
- 論文の詳細を見る
A simple theory is given for various effects of surface acoustic waves (SAW) on thecharacteristics of the Josephson effect in tunnel junctions which are narrow with respectto the Josephson penetration depth. We consider the case where a SAW is propagatedon the substrate on which the tunnel junction is fabricated. It is shown that new types ofsteps in the dc-current-voltage curves of the junction biased with a current source canoccur when (l) the phase velocity of the Josephson current density wave matches thevelocity of SAW and (2) the j>hase velocity of the Josephson current density wavemodified by SAW matches the phase velocity of tire electrom;tgnetic fields. Possibleapplications of the new phenomena to (1) a tunable SAW transducers and (2) a tunablegenerator of submillimeter wave pulses are briefly discussed.
- 社団法人日本物理学会の論文
- 1977-09-15
著者
-
Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
-
MORITA Seizo
Research Institute of Electrical Communication, Tohoku University
-
Morita Seizo
Research Institute Of Electrical Communication Tohoku University
-
Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
-
MIKOSHIBA Nobuo
Research Institute of Electrical Communication,Tohoku University
関連論文
- Anomalous Three-LO-Phonon Assisted Cyclotron Resonance with Spin-Flip Transitions in n-InSb
- Submillimeter-Wave Response of Nb-YBaCuO Point-Contact Josephson Junctions Using YBaCuO Thin Films Prepared by CVD
- Simulation of Shapiro Steps in a Josephson Junction Based on the Microscopic Theory of the Tunnel Junction
- Anomalous Corrugation Height of Atomically Resolved AFM Images of a Graphite Surface
- Simultaneous Observation of Atomically Resolved AFM/STM Images of a Graphite Surface
- Surface Conductance of Metal Surfaces in Air Studied with a Force Microscope
- Submillimeter-Wave Response of Nb-YBaCuO Point-Contact Josephson Junctions : Electrical Properties of Condensed Matter
- Damping Factor of the Riedel Peak in Brikge-Type Josephoson Junctions
- Frequency Dependence of the Submillimeter-Wave Response in the Tunnel-Type and Bridge-Type Josephson Junctions
- Correlation between Types of Junction and Submillimeter-Wave Responses in Point-Contact Josephson Junctions
- Frequency Dependence of the ac Josephson Effect in Nb Point Contacts in the Submillimeter-Wave Region
- Computer Simulation of Vortex Motion in a Josephson Junction Induced by Phonon Injection
- Vortex Motion in a Josephson Junction Induced by Phonon Injection
- Construction of a Scanning Tunneling Microscope for Electrochemical Studies
- Multilayer Piezoelectric Actuators for Scanning Tunneling Microscope : High Power Ultrasonics
- Weak Localization in Graphite
- Temperature Dependence of the Inelastic Scattering Time in Metallic n-GaAs
- Determination of Physical Parameters of the Anderson Localization in Metallic n-InSb
- Effects of the Anderson Localization on Magnetoconductivity in Metallic n-GaAs
- Voltage-Dependence of Scanning Tunneling Microscopy on Titanium Surface in Air
- Atomic Images of Disordered Regions in Graphite Crystals Obtained with Scanning Tunneling Microscope
- Atomic Corrugation of Kish Graphite in Air Measured with Scanning Tunneling Microscope
- Single Crystallization of Aluminum on SiO_2 by Thermnal Annealing and Observation with Scanning μ-RHEED Microscope
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI (SOLID STATE DEVICES AND MATERIALS 1)
- Theoretical Analysis for a New Package Concept : High-Speed Heat Removal for VLSI Using an AlN Heat-Spreading Layer and Microchannel Fin
- Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing (SOLID STATE DEVICES AND MATERIALS 1)
- Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships
- In Situ Observation of Electromigration in Cu Film Using Scanning μ-Reflection High-Energy Electron Diffraction Microscope
- Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300℃ Using Tetraethyl Orthosilicate
- Evaluation of LaB_6 Thin Film as Low-Work-Function Gate for MOSFET Operated at Low Temperature
- Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
- Temperature-Scaling Theory for Low-Temperature-Operated MOSFET with Deep-Submicron Channel : Semiconductors and Semiconductor Devices
- Pyrolysis and Photolysis of Trimethylaluminum
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
- Nondestructive and Noncontact Evaluation of Semiconductors by Photothermal Radiometry : Photoacoustic Spectroscopy
- Observation of Nonradiative Processes in Benzene Vapor by Photoacoustic Spectroscopy
- Quasi-Nondestructive Observation of Oxidation-Induced Stacking Faults in Silicon by Photoacoustic Topography
- Images of Barrier Layer of Anodic Aluminum Oxide in Air Obtained with Scanning Tunneling Microscope
- Phonon-Assisted Cyclotron Resonance Strongly Dependent on Surface Condition in n-InSb
- Nonlinear Interaction of Surface Acoustic Waves with the Josephson Junction
- Oxide Growth of Tin Films by Modified rf Plasma Oxidation Method
- Convolution and Acoustoelectric Effect by Elastic Surface Waves in Coupled Semiconductor-Piezoelectric System
- Oscillation of Two-Dimensional Modes in Transverse-Distributed-Feedback Cavity Lasers
- Tunneling-Type Temperature Dependence of Critical Current in Nb-Sn Point Contact
- Effect of the Shunt Capacitance on the ac Josephson Effect in Nb Point Contacts
- Peak Shifts ot the Photo-Induced Magnetophonon Resonance in n-InSb at 4.2 K
- 4-5 μm Emissions from 1.3-μm and 1.5-μm InGaAsP/InP Lasers : Evidence for Excitations in Split-Off Valence Band
- Saturable Inter-Valence-Band Absorptions in 1.3μm-InGaAsP Lasers : B-4: LD AND LED-2
- Generation Mechanisms of Current-Injection-Induced Acoustic (CIA) Signals in Semiconductor Lasers : Photo-Acoustic Spectroscopy
- Hole-Burnings Observed at High Energy Tails in Spontaneous Emission Spectra from 1.3 μm-InGaAsP/InP Lasers
- Analysis of Intrinsic Saturable Absorption in InGaAsP/InP Diode Lasers
- Investigation of 1.3-μm InGaAsP/InP Lasers by the Measurement of Current-Injection-Induced Acoustic (CIA) Signals
- Observation of Acoustic Signals from Semiconductor Lasers
- Note on Phonon Spectroscopy with Acoustoelectric Domain and Brillouin-Scattering Technique
- Contribution of the Imaginary Part of Photoelastic Constants to Resonant Brillouin Scattering in CdS
- Photoacoustic Measurement of Non-radiative States and Defects in CdS and Si with ZnO Transducer
- Note on the Selection Rule of Resonant Brillouin Scattering in CdS at Room Temperature
- (Invited) GaAs Acoustic Distributed Feedback Lasers : B-4: LASERS (1)
- Frequency Dependence of Lattice Attenuation of Ultrasonic Waves in CdS
- SAW Convolver Utilizing Sezawa Wave in a Monolithic ZnO/Si Configuration : Communication Devices and Materials
- Tunable Surface-Acoustic-Wave Generator on a Monolithic MIS Structure : C-5: ACOUSTIC DEVICES
- Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition
- Optical Absorption and Cathodoluminescence of Epitaxial Aluminum Nitride Films
- Electronic Conduction in Epitaxial Aluminum Nitride Films on Silicon
- Logarithmic Temperature Dependence of the Relaxation Time and Conductivity in Three-Dimensional Disordered Systems
- Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on α-Al_2O_3 Substrate : Surfaces, Interfaces and Films
- Zero Temperature Coefficient Surface-Acoustic-Wave Delay Lines on AlN/Al_2O_3
- High-Frequency and Low-Dispersion Characteristics of Surface Acoustic Waves on AlN/Al_2O_3
- Minority-Carrier Response in MIS Surface-Acoustic-Wave Convolver
- Investigation of Nonradiative Processes and Defects in Semiconductors by Photoacoustic and Photo-Thermal-Radiation Techniques
- Investigation of Nonradiative States in GaAs and InP by Photoaeoustic Spectroscopy
- Effect of Potentiostatic Control on in situ STM Images of Ag and Au Electrodes in a 0.1 M KCl Solution