Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on α-Al_2O_3 Substrate : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
An epitaxial film of AlN with a flat surface and good crystallinity was grown on an α-Al_2O_3 substrate by a new MOCVD. An initial-nitriding layer of the α-Al_2O_3 surface was employed as a buffer layer to reduce a lattice mismatch between the AlN film and the α-Al_2O_3 substrate. The initial-nitriiding layer was formed by chemical conversion of the α-Al_2O_3 surface in NH_3 gas at 1200℃.
- 社団法人応用物理学会の論文
- 1988-02-20
著者
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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Kawakami Hiroshi
Research Institute Of Electrical Communication Tohoku University
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SAKURAI Katsuhito
Research Institute of Electrical Communication, Tohoku University
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Sakurai Katsuhito
Research Institute Of Electrical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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