Photoacoustic Measurement of Non-radiative States and Defects in CdS and Si with ZnO Transducer
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概要
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Non-radiative states and defects in CdS and Si were studied at room temperature by means of a new photoacoustic (PA) technique. Signal detection was carried out by a ZnO transducer which operates in a wideband and high-frequency range. The fine structures due to A, B, C excitons and due to seven impurity states in CdS were observed as the maxima or minima in the PA spectra. It was also found that the spatial distribution of mechanical damage and defects in CdS and Si can be observed in the PA signals by scanning the laser beam spot across the sample.
- 社団法人応用物理学会の論文
- 1980-08-05
著者
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Wasa Kenji
Research Institute Of Electrical Communication Tohoku University
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University
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Tsubouchi Kazuo
Research Institute Of Electrical Communication Tohoku University
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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Mikoshiba Nobuo
Research Institute Of Electrical Communicatio
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electrical Communication,Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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MIKOSHIBA Nobuo
Research Institute of Electrical Communication,Tohoku University
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