Transmission Electron Microscopic Observation of AlN/α-Al_2O_3 Heteroepitaxial Interface with Initial-Nitriding AlN Layer
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概要
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The AlN/α-Al_2O_3 heteroepitaxial interface is investigated using a transmission electron microscope. The epitaxial AlN film is deposited by metalorganic chemical vapor deposition with and without initial nitriding. The initial nitriding method is to convert the α-Al_2O_3 substrate surface to a nanometer-thick AlN single-crystal buffer layer in NH_3 ambient just before AlN deposition. The (12^^-10)AlN/(11^^-02)α-Al_2O_3 interface with initial nitriding is found to be atomically flat, and no dislocation inside the postdeposited AlN is observed. We have confirmed that initial nitriding is excellent in improving the crystal quality of the AlN epitaxial layer.
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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Masu Kazuya
Research Institute Of Electrical Communication Tohoku University
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Shibata Tomohiko
Research Institute Of Electrical Communication Tohoku University:ngk Insulators Ltd.
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TSUBOUCHI Kazuo
Research Institute of Electrical Communication, Tohoku University
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Nakamura Yukinori
Research Institute Of Electrical Communication Tohoku University
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Yamazaki Tsuyoshi
Research Institute Of Electrical Communication Tohoku University
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Tsubouchi Kazuo
Research Institute Of Electrical Communication Tohoku University
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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TAKAHASHI Michio
Corporate Research and Development Group, NGK Insulators, Ltd.
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Takahashi Michio
Corporate Research And Development Group Ngk Insulators Ltd.
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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