5GHz band low phase noise Si-CMOS oscillator using FBAR
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概要
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In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.
著者
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TA Tuan
Research Institute of Electrical Communication, Tohoku University
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Ta Tuan
Research Institute Of Electrical Communication Tohoku University
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TANIFUJI Shoichi
Research Institute of Electrical Communication, Tohoku University
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TANIFUJI Shoichi
Research Institute of Electric Communication (RIEC), Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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TAKAGI Tadashi
Research Institute of Electric Communication (RIEC), Tohoku University
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KAMEDA Suguru
Research Institute of Electric Communication (RIEC), Tohoku University
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